Resonant-Body Fin-FETs with sub-nW power consumption

This paper presents, for the first time, experimental evidence on resonant-body Fin-FETs (RB-FinFET) with two independent lateral gates, operated from weak to strong inversion, which enables unique trade-off between power consumption and gain. Resonance frequencies from 25 MHz to 80 MHz with quality factors of the order of 3000 and motional resistances of the order of tens of kOhm are demonstrated with a mixer mode measurement technique, dedicated to ultra-scaled resonators. The power consumption of the active resonators can be reduced in weak inversion of the RB-FinFET well below 1nW, which is a record value compared to any prior active NEM resonator.


Published in:
2010 International Electron Devices Meeting - Technical Digest, -
Presented at:
International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 06-08, 2010
Year:
2010
Publisher:
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
ISBN:
978-1-4244-7419-6
Keywords:
Laboratories:




 Record created 2011-12-16, last modified 2018-03-17

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