High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs
2009
Abstract
InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room temperature and 2.5 mW at 80 degrees C for both 1310 nm and 1550 nm devices is demonstrated for the first time. (C)2008 Optical Society of America
Details
Title
High Fundamental Mode Power, High Speed InAlGaAs/AlGaAs 1310 and 1550-nm Wafer-Fused VCSELs
Author(s)
Sirbu, A. ; Mereuta, A. ; Caliman, A. ; Iakovlev, V. ; Suruceanu, G. ; Kapon, E.
Published in
Aoe 2008: Asia Optical Fiber Communication And Optoelectronic Exposition And Conference
Conference
Asia Optical Fiber Communication and Optoelectronic Exposition and Conference, Shanghai, PEOPLES R CHINA, Oct 30-Nov 02, 2008
Date
2009
Publisher
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
ISBN
978-1-55752-863-6
Keywords
Other identifier(s)
View record in Web of Science
Laboratories
LPN
Record Appears in
Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPN - Laboratory of the Physics of Nanostructures
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2011-12-16