Standard-free composition measurements of AlxIn1-xN by low-loss electron energy loss spectroscopy

We demonstrate a standard-free method to retrieve compositional information in AlxIn1-xN thin films by measuring the bulk plasmon energy (E-p), employing electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM). Two series of samples were grown by magnetron sputter epitaxy (MSE) and metal organic vapor phase epitaxy (MOVPE), which together cover the full compositional range 0 <= x <= 1. Complementary compositional measurements were obtained using Rutherford backscattering spectroscopy (RBS) and the lattice parameters were obtained by X-ray diffraction (XRD). It is shown that E-p follows a linear relation with respect to composition and lattice parameter between the alloying elements from AlN to InN allowing for straightforward compositional analysis. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Published in:
Physica Status Solidi-Rapid Research Letters, 5, 50-52

 Record created 2011-12-16, last modified 2018-03-17

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