Local modification of GaAs nanowires induced by laser heating

GaAs nanowires were heated locally under ambient air conditions by a focused laser beam which led to oxidation and formation of crystalline arsenic on the nanowire surface. Atomic force microscopy, photoluminescence and Raman spectroscopy experiments were performed on the same single GaAs nanowires in order to correlate their structural and optical properties. We show that the local changes of the nanowires act as a barrier for thermal transport which is of interest for thermoelectric applications.


Published in:
Nanotechnology, 22, -
Year:
2011
Publisher:
Institute of Physics
ISSN:
0957-4484
Keywords:
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 Record created 2011-12-16, last modified 2018-09-13

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