000170998 001__ 170998
000170998 005__ 20180913060921.0
000170998 0247_ $$2doi$$a10.1016/j.mee.2010.12.064
000170998 02470 $$2ISI$$a000293663400055
000170998 037__ $$aARTICLE
000170998 245__ $$aFinFET for high sensitivity ion and biological sensing applications
000170998 269__ $$a2011
000170998 260__ $$c2011
000170998 336__ $$aJournal Articles
000170998 520__ $$aA double-gate (DG) fin field effect transistor (FinFET) is discussed as new label-free ion and biological sensor. Simulations as function of channel doping, geometrical dimensions, operation point and materials investigated the device response to an external potential difference which provides a body threshold voltage modulation. The simulation results presented in this work clearly state the key features for an ultrasensitive FET based sensor: an enhancement low doped and partially gated transistor operating in weak-moderate inversion regime. The optimized sensitivity, obtained when the width of the fin is equal to the gate height (W-NW similar to h(g)), reaches a value of 85% for an extraction current, I-d, of 0.1 mu A. These results pave the way for the fabrication process of an innovative CMOS compatible sensing system. (C) 2011 Elsevier B.V. All rights reserved.
000170998 6531_ $$aFinFET
000170998 6531_ $$aBio-sensing
000170998 6531_ $$aSensitivity
000170998 6531_ $$aTop insulator layer
000170998 6531_ $$aChannel doping
000170998 6531_ $$aGeometrical dimensions
000170998 700__ $$0244767$$aRigante, Sara$$g188036
000170998 700__ $$0244761$$aLattanzio, Livio$$g181885
000170998 700__ $$0241430$$aIonescu, Adrian M.$$g122431
000170998 773__ $$j88$$q1864-1866$$tMicroelectronic Engineering
000170998 909C0 $$0252177$$pNANOLAB$$xU10328
000170998 909CO $$ooai:infoscience.tind.io:170998$$pSTI$$particle
000170998 917Z8 $$x198278
000170998 937__ $$aEPFL-ARTICLE-170998
000170998 973__ $$aEPFL$$rREVIEWED$$sPUBLISHED
000170998 980__ $$aARTICLE