Herein we report a theoretical study of diode-like behavior of negatively charged (e.g., glass or silica) nanopores at different potential scan rates (1-1000 V center dot s(-1)). Finite element simulations were used to determine current-voltage characteristics of conical nanop ores at various electrolyte concentrations. This study demonstrates that significant changes in rectification behavior can be observed at high scan rates because the mass transport of ionic species appears sluggish on the time scale of the voltage scan. In particular, it explains the influence of the potential scan rate on the nanopore rectifying properties in the cases of classical rectification, rectification inversion, and the "transition" rectification domain where the rectification direction in the nanopore could be modulated according to the applied scan rate.