Free standing modulation doped core-shell GaAs/AlGaAs hetero-nanowires

Modulation doped AlGaAs/GaAs core-shell nanowire structures were grown by molecular beam epitaxy. A Si delta-doping was introduced in the AlGaAs shell around the {110} facets of the GaAs core. The wires are typically highly resistive at low temperatures. However, they show a pronounced persistent photoconductivity effect indicating activation of free carriers from the delta-doped shell to the GaAs core. The n-type character of the channel is demonstrated by applying a back-gate voltage. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim


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Physica Status Solidi-Rapid Research Letters, 5, 353-355
Year:
2011
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 Record created 2011-12-16, last modified 2018-03-17

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