Nanowire based heterostructures: Fundamental properties and applications

In this paper the fundamental properties of heterostructures based on semiconductor nanowires synthesized with molecular beam epitaxy are reviewed. Special focus is given on surface passivation mechanisms with radial epitaxial passivation shells. The growth of radial p-i-n junctions in GaAs nanowires is discussed. Characterization of such nanowires on a single nanowire level is presented. The fundamental limits of single nanowire optical device performance are obtained by numerical simulation and discussed.


Published in:
Nanoepitaxy: Materials And Devices Iii, 8106, -
Presented at:
Conference on Nanoepitaxy - Materials and Devices III, San Diego, CA, Aug 24-25, 2011
Year:
2011
Publisher:
Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa
ISBN:
978-0-81948-716-2
Keywords:
Laboratories:




 Record created 2011-12-16, last modified 2018-03-17

Publisher's version:
Download fulltext
PDF

Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)