000170303 001__ 170303
000170303 005__ 20180317092535.0
000170303 02470 $$2ISI$$a000299901200055
000170303 037__ $$aCONF
000170303 041__ $$aeng
000170303 245__ $$aPiezoresistive n-Type 4H-SiC Pressure Sensor with Membrane Formed by Mechanical Milling
000170303 260__ $$bIeee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa$$c2011
000170303 269__ $$a2011
000170303 336__ $$aConference Papers
000170303 520__ $$aA 4H-SiC pressure sensor with piezoresistive transducers, for harsh environment applications, e.g., high temperature (~650°C) and/or in corrosive chemicals is presented. The sensing membrane, 1 mm in diameter and 50 µm in thickness, was formed by milling (drilling) a bulk single crystal SiC wafer. Both transverse and longitudinal piezoresistors were formed on the membrane out of an n-type SiC epitaxial layer. Ohmic contacts were obtained with Ta/Ni/Pt metallization followed by annealing at 1000°C for 20 min. The sensor was assembled on a small board and characterized under hydrostatic pressures up to 60 bar at room temperature. The obtained pressure sensitivity was 268 µV/V/bar. The sensor chip was exposed in air at 600°C for 165 hours and changes in bridge resistance were measured. 
000170303 700__ $$0243294$$aAkiyama, Terunobu$$g190003
000170303 700__ $$0243293$$aBriand, Danick$$g188690
000170303 700__ $$0243301$$ade Rooij, Nico$$g104887
000170303 7112_ $$aIEEE Sensors 2011$$cLimerik, Ireland$$dOctober 28-31, 2011
000170303 773__ $$j1$$q222-225$$tProceedings of IEEE Sensors
000170303 909CO $$ooai:infoscience.tind.io:170303$$pconf
000170303 909C0 $$0252173$$pSAMLAB$$xU10329
000170303 917Z8 $$x190047
000170303 937__ $$aEPFL-CONF-170303
000170303 973__ $$aEPFL$$rNON-REVIEWED$$sPUBLISHED
000170303 980__ $$aCONF