@article{Akiyama:170303,
      title = {Piezoresistive n-Type 4H-SiC Pressure Sensor with Membrane  Formed by Mechanical Milling},
      author = {Akiyama, Terunobu and Briand, Danick and de Rooij, Nico},
      publisher = {Ieee Service Center, 445 Hoes Lane, Po Box 1331,  Piscataway, Nj 08855-1331 Usa},
      journal = {Proceedings of IEEE Sensors},
      volume = {1},
      pages = {222-225},
      year = {2011},
      abstract = {A 4H-SiC pressure sensor with piezoresistive transducers,  for harsh environment applications, e.g., high temperature  (~650°C) and/or in corrosive chemicals is presented. The  sensing membrane, 1 mm in diameter and 50 µm in thickness,  was formed by milling (drilling) a bulk single crystal SiC  wafer. Both transverse and longitudinal piezoresistors were  formed on the membrane out of an n-type SiC epitaxial  layer. Ohmic contacts were obtained with Ta/Ni/Pt  metallization followed by annealing at 1000°C for 20 min.  The sensor was assembled on a small board and characterized  under hydrostatic pressures up to 60 bar at room  temperature. The obtained pressure sensitivity was 268  µV/V/bar. The sensor chip was exposed in air at 600°C for  165 hours and changes in bridge resistance were measured. },
}