Development of High Temperature Platinum TSVs

We report on harsh-environment-compatible Pt-TSVs forming ohmic contacts with a highly doped bulk silicon. They were developed as a part of a Single Wall Carbone NanoTube (SWCNT) resonator device with 3D-packaging. The fundamental properties of the TSVs, experimentally obtained with bulk Si instead of the real working device, are presented. Our concept for the device fabrication is “via first”, followed by the nanodevice fabrication. As such, first ohmic contacts on silicon has been studied to be compatible with several harsh post-processing steps, including high temperature treatments—up to 850°C in air—and concentrated HF-based release steps. Then TSVs withstanding the aforesaid conditions have been developed. These interconnects are also of interest for MEMS devices operating at high temperature.


Published in:
Proceedings of Eurosensors XXV, 25, 1513-1516
Presented at:
Eurosensors XXV, Athens, Greece, September 4-7, 2011
Year:
2011
Publisher:
Elsevier Science, Reg Sales Off, Customer Support Dept, 655 Ave Of The Americas, New York, Ny 10010 Usa
Keywords:
Laboratories:




 Record created 2011-11-10, last modified 2018-03-17


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