GaInAsN quantum dots (QDs) were grown in inverted pyramids on a patterned (111) B GaAs surface. Incorporation of N in the active structure is attested to by a significant (similar to 80 meV) redshift of the photoluminescence spectrum of the QDs. Influence of the capillarity effect on the N incorporation is evidenced by comparing the redshift in the QD emission to that of its quantum wire (QWR) barriers. The significant increase in the inhomogeneous broadening of the InGaAsN QD arrays as compared to similar InGaAs QDs is explained by the large influence of a small number of N atoms and their configuration within the QD on its effective bandgap and confinement energy. (C) 2011 American Institute of Physics. [doi:10.1063/1.3657770]