Hall effect sensors performance investigation using three-dimensional simulations

Several Hall effect sensors were modeled and evaluated regarding the Hall voltage and sensitivity using 3D physical simulations. For accurate results the numerical offset and its temperature drift were analyzed. The versatility of the simulation allows various Hall sensor implementations. The simulation procedure could guide the designer in choosing the Hall cell optimum fabrication process, shape and dimensions in terms of the performances envisaged to be achieved. © 2011 Tech Univ of Lodz


Published in:
Proceedings of the 18th International Conference - Mixed Design of Integrated Circuits and Systems, MIXDES 2011, Article number 6015957, 450-455
Presented at:
18th International Conference - Mixed Design of Integrated Circuits and Systems, MIXDES 2011, Gliwice; Poland, 16 June 2011 through 18 June 2011
Year:
2011
ISBN:
978-839320750-3
Keywords:
Laboratories:




 Record created 2011-11-07, last modified 2018-03-17


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