Meshing strategy of equivalent substrate schematic in SMART power IC

In this paper, a modeling methodology able to create an equivalent schematic of an High-Voltage integrated circuit is developed. The equivalent schematic is based on enhanced model of diodes and resistances, accounting for minority and majority carrier propagation at their boundary. In this work, the methodology to interconnect these elements in order to be able to model multi-dimensional current path is developed and applied to an industrial H-Bridge architecture. The coupled parasitic currents obtained with the equivalent schematic are compared against measurements and confirm that the model is accurate and can be used to estimate substrate parasitic signals. © 2011 IEEE.


Published in:
2011 IEEE International Symposium of Circuits and Systems (ISCAS), 821-824
Presented at:
2011 IEEE International Symposium on Circuits and Systems (ISCAS), Rio de Janeiro, Brazil, 15-18 05 2011
Year:
2011
Publisher:
IEEE
ISBN:
978-142449473-6
Keywords:
Laboratories:




 Record created 2011-11-07, last modified 2018-09-13


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