Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects
Zaka, A.; Singer, J.; Dornel, E.; Garetto, D.; Rideau, D.; Rafhay, Q.; Clerc, R.; Manceau, J.-P.; Degors, N.; Boccaccio, C.; Tavernier, C.; Jaouen, H.
2011

Abstract

The impact of 3D device architecture in aggressively scaled embedded non-volatile memories has been investigated by means of experiments and 3D TCAD simulations. A complete 3D calibration methodology covering DC and transient operating regimes has been introduced and validated against measurements for different technological options. This approach has been employed to determine the key features for device optimization. In particular, shallow trench isolation corners around the active area have been identified as critical regions of the memory cell for program and erase operations, as well as for gate coupling ratio optimization. © 2011 Elsevier Ltd. All rights reserved.

Details

Title Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects
Author(s) Zaka, A. ; Singer, J. ; Dornel, E. ; Garetto, D. ; Rideau, D. ; Rafhay, Q. ; Clerc, R. ; Manceau, J.-P. ; Degors, N. ; Boccaccio, C. ; Tavernier, C. ; Jaouen, H.
Published in Solid-State Electronics
Volume 63
Issue 1
Pages 158-162
Date 2011
DOI https://doi.org/10.1016/j.sse.2011.05.017
Laboratories LSM
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSM - Microelectronic Systems Laboratory
Work produced at EPFL
Journal Articles
Published
Record creation date 2011-11-01