Characterization and physical modeling of endurance in embedded non-volatile memory technology
Garetto, D.; Zaka, A.; Manceau, J.-P.; Rideau, D.; Dornel, E.; Clark, W. F.; Schmid, A.; Jaouen, H.; Leblebici, Y.
2011

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Abstract

Transient and endurance mechanisms in highperformance embedded non-volatile memory flash devices are investigated in detail. An extraction methodology combining measurements on equivalent transistors and flash cells is proposed to discriminate the effects of defects on program/erase (P/E) efficiencies and on DC characteristics. A semi-analytical multiphonon-assisted charge trapping model is used to investigate the role and the impact of trapped charges on channel hotelectron injection and Fowler-Nordheim efficiencies, threshold voltage variations and endurance characteristics. © 2011 IEEE.

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Title Characterization and physical modeling of endurance in embedded non-volatile memory technology
Author(s) Garetto, D. ; Zaka, A. ; Manceau, J.-P. ; Rideau, D. ; Dornel, E. ; Clark, W. F. ; Schmid, A. ; Jaouen, H. ; Leblebici, Y.
Published in Proceedings of the 3rd IEEE International Memory Workshop
Conference 3rd IEEE International Memory Workshop, Monterey, California, USA, May 22-25, 2011
Date 2011
DOI https://doi.org/10.1109/IMW.2011.5873186
Laboratories LSM
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSM - Microelectronic Systems Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date 2011-10-31

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