Conference paper

Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs

In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to  400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.

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