Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs

In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to ~400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.


Published in:
Device Research Conference (DRC), 2011 69th Annual, 145-146
Presented at:
69th annual IEEE Device Research Conference (IEEE DRC), Santa Barbara, California, USA, 20-22 June 2011
Year:
2011
ISBN:
978-1-61284-242-4
Keywords:
Laboratories:




 Record created 2011-10-14, last modified 2018-03-17

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