Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
In this work we report an experimental study on accumulation-mode (AM) gate-all-around (GAA) nMOSFETs based on silicon nanowires with uniaxial tensile strain. Their electrical characteristics are studied from room temperature up to 400 K and carrier mobility, flat-band and threshold voltages are extracted and investigated.
Keywords: SNSF Nanowire ; Si nanowire ; Gate-All-Around ; Local stressor ; CMOS booster ; Uniaxial tensile strain ; Strained Si ; Elastic local buckling ; Carrier mobility enhancement ; High temperature performance MOSFET ; Scattering mechanism in nanoscale ; Accumulation-Mode ; Highly doped operation regime
Record created on 2011-10-14, modified on 2016-08-09