@article{BenJamaa:168226,
      title = {Polysilicon Nanowire Transistors and Arrays Fabricated  With the Multispacer Technique},
      author = {Ben Jamaa, Haykel and Cerofolini, Gianfranco and De  Micheli, Giovanni and Leblebici, Yusuf},
      publisher = {Institute of Electrical and Electronics Engineers},
      journal = {IEEE Transactions on Nanotechnology},
      number = {4},
      volume = {10},
      pages = {891-899},
      year = {2011},
      abstract = {In this paper, we demonstrate the ability of the multi-  spacer patterning technique to yield layers of  polycrystalline silicon nanowires with a sublithographic  pitch, by exclusively using micrometer resolution and CMOS  processing steps. We characterize single spacers operating  as poly-Si nanowire field effect transistors . We  demonstrate also the possibility to lay a spacer  perpendicularly to a set of parallel spacers in a crossbar  fashion. The extrapolated cross-point density from the  small 4 × 1-array is in the range of 10 exp10	cm−2  .	We	discuss the applications of this technique to improve  the density of previously reported poly-SiNW memories and  as a future framework for nanowire crossbars and decoders.  Then we analyze the limitations and costs of the proposed  technique.},
      url = {http://infoscience.epfl.ch/record/168226},
      doi = {10.1109/TNANO.2010.2089532},
}