@article{BenJamaa:168226, title = {Polysilicon Nanowire Transistors and Arrays Fabricated With the Multispacer Technique}, author = {Ben Jamaa, Haykel and Cerofolini, Gianfranco and De Micheli, Giovanni and Leblebici, Yusuf}, publisher = {Institute of Electrical and Electronics Engineers}, journal = {IEEE Transactions on Nanotechnology}, number = {4}, volume = {10}, pages = {891-899}, year = {2011}, abstract = {In this paper, we demonstrate the ability of the multi- spacer patterning technique to yield layers of polycrystalline silicon nanowires with a sublithographic pitch, by exclusively using micrometer resolution and CMOS processing steps. We characterize single spacers operating as poly-Si nanowire field effect transistors . We demonstrate also the possibility to lay a spacer perpendicularly to a set of parallel spacers in a crossbar fashion. The extrapolated cross-point density from the small 4 × 1-array is in the range of 10 exp10 cm−2 . We discuss the applications of this technique to improve the density of previously reported poly-SiNW memories and as a future framework for nanowire crossbars and decoders. Then we analyze the limitations and costs of the proposed technique.}, url = {http://infoscience.epfl.ch/record/168226}, doi = {10.1109/TNANO.2010.2089532}, }