Self Aligned Concentric Nanostructures Formed by E-beam Overexposure of PMMA and Single Post Processing Steps

We demonstrate the ability to control the creation of self aligned nanostructures by e-beam lithography, where a central nanopillar with circular rim is created in a single e-beam exposure [1,2]. This characteristic shape is formed by the energy density distribution of incident, forwardscattered and backscattered electrons [3] and reflects the dual behavior of PMMA as positive and negative e-beam resist. In addition, the high energy incident electrons have a confined heating effect on the PMMA and carbonize the polymer from top to bottom. At the same time, electrons backscattered from the underlying material will break the polymeric bonds around thiscarbonized region and render the PMMA soluble in developer solution.

Presented at:
The 55th Conference on Electron, Ion and Photon Beam Technology and Nanofabrication (EIPBN 2011), Las Vegas, Nevada, USA, May 31-June 3, 2011

 Record created 2011-08-23, last modified 2018-03-17

Rate this document:

Rate this document:
(Not yet reviewed)