Combinatorial Chemical Beam Epitaxy of Lithium Niobate Thin Films on Sapphire

A combinatorial chemical beam epitaxy technique was used to optimize deposition of (001) lithium niobate thin films on {001} sapphire substrates. Lithium tert-butoxide [Li(OBut)] and niobium tetra-ethoxy di-methyl-amino-ethoxide [Nb(OEt)(4)(dmac)] were used as precursors. The highest quality films obtained exhibited rocking curve full-width at half-maximum values of about 0.03 degrees and lithium contents {[Li]/[(Li)) + (Nb)]} larger than 48 (mol %) estimated by Raman spectroscopy. High-resolution transmission electron microscopy observations revealed that the lithium niobate film consists of a buffer layer (thickness <8 nm) with a high density of defects above which the epitaxial lithium niobate film was obtained. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3519843] All rights reserved.


Published in:
Journal of The Electrochemical Society, 158, 2, D72
Year:
2011
Publisher:
Electrochemical Society
ISSN:
0013-4651
Keywords:
Laboratories:




 Record created 2011-08-11, last modified 2018-03-18


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