000167836 001__ 167836
000167836 005__ 20180913060740.0
000167836 0247_ $$2doi$$a10.1088/0957-4484/22/25/254004
000167836 022__ $$a1361-6528
000167836 02470 $$2ISI$$a000290619900005
000167836 037__ $$aARTICLE
000167836 245__ $$aFerroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers
000167836 260__ $$c2011
000167836 269__ $$a2011
000167836 336__ $$aJournal Articles
000167836 520__ $$a(Ga, Mn)As and other diluted magnetic semiconductors (DMS) attract a great deal of attention for potential spintronic applications because of the possibility of controlling the magnetic properties via electrical gating. Integration of a ferroelectric gate on the DMS channel adds to the system a non-volatile memory functionality and permits nanopatterning via the polarization domain engineering. This topical review is focused on the multiferroic system, where the ferromagnetism in the (Ga, Mn)As DMS channel is controlled by the non-volatile field effect of the spontaneous polarization. Use of ferroelectric polymer gates in such heterostructures offers a viable alternative to the traditional oxide ferroelectrics generally incompatible with DMS. Here we review the proof-of-concept experiments demonstrating the ferroelectric control of ferromagnetism, analyze the performance issues of the ferroelectric gates and discuss prospects for further development of the ferroelectric/DMS heterostructures toward the multiferroic field effect transistor.
000167836 6531_ $$aElectric-Field
000167836 6531_ $$aTransport-Properties
000167836 6531_ $$aEffect Transistor
000167836 6531_ $$aThin-Films
000167836 6531_ $$aSemiconductors
000167836 6531_ $$aPolarization
000167836 6531_ $$aHeterostructures
000167836 6531_ $$aManganites
000167836 6531_ $$a(Ga,Mn)As
000167836 6531_ $$aProgress
000167836 700__ $$0240850$$aStolichnov, I.$$g112564
000167836 700__ $$aRiester, S. W. E.
000167836 700__ $$aMikheev, E.
000167836 700__ $$0240019$$aSetter, N.$$g106416
000167836 700__ $$aRushforth, A. W.
000167836 700__ $$aEdmonds, K. W.
000167836 700__ $$aCampion, R. P.
000167836 700__ $$aFoxon, C. T.
000167836 700__ $$aGallagher, B. L.
000167836 700__ $$aJungwirth, T.
000167836 700__ $$0240216$$aTrodahl, H. J.$$g170310
000167836 773__ $$j22$$k25$$q254004$$tNanotechnology
000167836 909C0 $$0252012$$pLC$$xU10334
000167836 909CO $$ooai:infoscience.tind.io:167836$$pSTI$$particle
000167836 917Z8 $$x201983
000167836 937__ $$aEPFL-ARTICLE-167836
000167836 973__ $$aEPFL$$rNON-REVIEWED$$sPUBLISHED
000167836 980__ $$aARTICLE