Mixed phase silicon oxide layers for thin-film silicon solar cells

Lower absorption, lower refractive index and tunable resistance are three advantages of doped silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to doped microcrystalline silicon, for the use as p- and n-type layers in thin-film silicon solar cells. In this study we show how optical, electrical and microstructural properties of nc-SiOx layers depend on precursor gas ratios and we propose a growth model to explain the phase separation in such films into Si-rich and O-rich regions as visualized by energy-filtered transmission electron microscopy. INTRODUCTION


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Proceedings of MRS Spring Meeting 2011 San Francisco, 1321
Year:
2011
Note:
IMT-NE number: 610
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 Record created 2011-08-02, last modified 2018-01-28

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