Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics

In this letter we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) co-integration with 380 ìm-height Cu Through Silicon Via (TSV) arrays for programmable 3D interconnects. Nonvolatile resistive switching of Pt/TiO2/Pt thin films are first characterized with resistance ratio up to 5 orders of magnitude. Then co-integration of Pt/TiO2/Pt or Pt/TiO2 memory cells on 140 um and 60 um diameter Cu TSV are fabricated. Repeatable non-volatile bipolar switching of the ReRAM cells are demonstrated for different structures.


Published in:
IEEE Transactions on Nanotechnology, 11, 1, 8-11
Year:
2012
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
1536-125X
Keywords:
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 Record created 2011-07-15, last modified 2018-12-03

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