Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics
Sacchetto, Davide; Zervas, Michail; Temiz, Yuksel; De Micheli, Giovanni; Leblebici, Yusuf
2012

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Abstract

In this letter we report on the fabrication and characterization of titanium dioxide (TiO2)-based resistive RAM (ReRAM) co-integration with 380 ìm-height Cu Through Silicon Via (TSV) arrays for programmable 3D interconnects. Nonvolatile resistive switching of Pt/TiO2/Pt thin films are first characterized with resistance ratio up to 5 orders of magnitude. Then co-integration of Pt/TiO2/Pt or Pt/TiO2 memory cells on 140 um and 60 um diameter Cu TSV are fabricated. Repeatable non-volatile bipolar switching of the ReRAM cells are demonstrated for different structures.

Details

Title Resistive Programmable Through Silicon Vias for Reconfigurable 3D Fabrics
Author(s) Sacchetto, Davide ; Zervas, Michail ; Temiz, Yuksel ; De Micheli, Giovanni ; Leblebici, Yusuf
Published in IEEE Transactions on Nanotechnology
Volume 11
Issue 1
Pages 8-11
Date 2012
Publisher Institute of Electrical and Electronics Engineers
ISSN 1536-125X
Keywords
DOI https://doi.org/10.1109/TNANO.2011.2160557
Other identifier(s) View record in Web of Science
Laboratories LSM
LSI1
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > LSM - Microelectronic Systems Laboratory
Scientific production and competences > I&C - School of Computer and Communication Sciences > IINFCOM > LSI1 - Integrated Systems Laboratory 1 (STI/IC)
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date 2011-07-15

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