000167504 001__ 167504
000167504 005__ 20190415234843.0
000167504 020__ $$a978-1-4419-7444-0
000167504 037__ $$aBOOK_CHAP
000167504 245__ $$aReliable Circuit Design with Nanowire Arrays
000167504 269__ $$a2011
000167504 260__ $$bSpringer$$c2011
000167504 336__ $$aBook Chapters
000167504 520__ $$aThe emergence of different fabrication techniques of silicon nanowires (SiNWs) raises the question of finding a suitable architectural organization of circuits based on them. Despite the possibility of building conventional CMOS circuits with SiNWs, the ability to arrange them into regular arrays, called crossbars, offers the opportunity to achieve higher integration densities. In such arrays, molecular switches or phase-change materials are grafted at the crosspoints, i.e., the crossing nanowires, in order to perform computation or storage. Given the fact that the technology is not mature, a hybridization of CMOS circuits with nanowire arrays seems to be the most promising approach. This chapter addresses the impact of variability on the nanowires in circuit designs based on the hybrid CMOS-SiNW crossbar approach.
000167504 700__ $$aBen Jamaa, Haykel
000167504 700__ $$0240269$$g167918$$aDe Micheli, Giovanni
000167504 720_1 $$aJha, C.$$eed.
000167504 720_1 $$aChen, D.$$eed.
000167504 773__ $$tNanoelectronic Circuit Design$$q153-188
000167504 8564_ $$uhttp://www.springer.com/engineering/book/978-1-4419-7444-0$$zURL
000167504 8564_ $$uhttps://infoscience.epfl.ch/record/167504/files/fulltext.pdf$$zn/a$$s962059$$yn/a
000167504 909C0 $$xU11140$$0252283$$pLSI1
000167504 909CO $$pchapter$$ooai:infoscience.tind.io:167504$$pSTI$$pbook$$pIC$$qGLOBAL_SET
000167504 917Z8 $$x112915
000167504 917Z8 $$x112915
000167504 937__ $$aEPFL-CHAPTER-167504
000167504 973__ $$sPUBLISHED$$aEPFL
000167504 980__ $$aCHAPTER