High-Power 1.48-μm Wafer-Fused Optically Pumped Semiconductor Disk Laser

An output power up to 5 W at 1.48- m wavelength is achieved from an optically pumped semiconductor disk laser. An active region composed of an AlGaInAs/InP heterostructure grown on an InP substrate was wafer fused with an AlGaAs/GaAs Bragg reflector grown on a GaAs substrate. An intracavity diamond heatspreader bonded to the gain structure surface provides efficient heat removal from the active element. The results further validate that the wafer fusion technique offers a flexible platform for high-power disk lasers in a wide wavelength range.


Published in:
IEEE Photonics Technology Letters, 23, 13, 917
Year:
2011
Publisher:
Institute of Electrical and Electronics Engineers
ISSN:
1041-1135
Keywords:
Laboratories:




 Record created 2011-07-01, last modified 2018-03-17


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