Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces
De Wolf, Stefaan; Demaurex, Bénédicte; Descoeudres, Antoine; Ballif, Christophe
2011

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Abstract

Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called "fast" states and (internal) surface reconstruction in bulk a-Si:H.

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Title Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces
Author(s) De Wolf, Stefaan ; Demaurex, Bénédicte ; Descoeudres, Antoine ; Ballif, Christophe
Published in Physical Review B
Volume 83
Issue 23
Pages 233301
Date 2011
ISSN 1550-235X
Keywords
Note IMT-NE Number: 608
DOI https://doi.org/10.1103/PhysRevB.83.233301
Other identifier(s) View record in Web of Science
Laboratories PV-LAB
Record Appears in Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > PV-LAB - Photovoltaics and Thin Film Electronics Laboratory
Scientific production and competences > EPFL Partners > Neuchâtel Campus > PV-Lab - Photovoltaics and Thin Film Electronics Laboratory
Work produced at EPFL
Journal Articles
Published
Record creation date 2011-06-16

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