Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces

Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called "fast" states and (internal) surface reconstruction in bulk a-Si:H.


Published in:
Physical Review B, 83, 23
Year:
2011
ISSN:
1550-235X
Keywords:
Note:
IMT-NE Number: 608
Laboratories:




 Record created 2011-06-16, last modified 2018-03-17

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