000166765 001__ 166765
000166765 005__ 20190604054641.0
000166765 0247_ $$2doi$$a10.1166/sam.2011.1172
000166765 02470 $$2ISI$$a000293362800016
000166765 037__ $$aARTICLE
000166765 245__ $$aSilicon Nanowire Arrays and Crossbars: Top-Down Fabrication Techniques and Circuit Applications
000166765 269__ $$a2011
000166765 260__ $$c2011
000166765 336__ $$aJournal Articles
000166765 520__ $$aSeveral nanowire technologies have emerged recently, providing a way to continue the scaling down of complementary metal-oxide-semiconductor (CMOS) technology. The opportunities offered at the level of logic circuit design depend on the technology properties, and some applications seem to be suitable for specific technologies. In this paper, we survey three nanowire technologies that yield nanowire arrays. All of them depend on the photolithography limit but they differ with respect to the processing and the device properties. We show the ability of the spacer technique to yield nanowires with a pitch below the photolithography limit. We introduce the nanowire crossbars in a pure CMOS process and extract the parasitics that affect nanowire crossbar circuits. Vertically stacked nanowires are also demonstrated with the deep reactive ion etching (DRIE) process. We link the surveyed processes to specific circuit architectures that are optimized for the considered technologies. A nanowire decoder for sub-lithographic nanowires is demonstrated with the smallest size compared to other competing technologies. Then an optimized crossbar multiplexer is presented, which takes into account the presence of parasitics. Finally, a general library of logic gates based on vertically stacked nanowires is evaluated showing a smaller area and a better performance than CMOS.
000166765 6531_ $$aSilicon Nanowires
000166765 6531_ $$aSpacer Technique
000166765 6531_ $$aReconfigurable Logic
000166765 700__ $$0240267$$g169539$$aBen Jamaa, Haykel
000166765 700__ $$aGaillardon, Pierre-Emmanuel
000166765 700__ $$aClermidy, Fabien
000166765 700__ $$aO'Connor, Ian
000166765 700__ $$0242417$$g181895$$aSacchetto, Davide
000166765 700__ $$g167918$$aDe Micheli, Giovanni$$0240269
000166765 700__ $$aLeblebici, Yusuf$$g112194$$0240162
000166765 773__ $$j3$$tScience of Advanced Materials$$q466-476
000166765 8564_ $$uhttps://infoscience.epfl.ch/record/166765/files/s16.pdf$$zn/a$$s3232451
000166765 909C0 $$xU10325$$0252051$$pLSM
000166765 909C0 $$0252283$$pLSI1$$xU11140
000166765 909CO $$qGLOBAL_SET$$pSTI$$pIC$$particle$$ooai:infoscience.tind.io:166765
000166765 917Z8 $$x112194
000166765 917Z8 $$x181895
000166765 917Z8 $$x112915
000166765 937__ $$aEPFL-ARTICLE-166765
000166765 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000166765 980__ $$aARTICLE