Ambipolar Si Nanowire Field Effect Transistors for Low Current and Temperature Sensing

This paper reports on the fabrication and characterization of a pA current and temperature sensing device with ultra-low power consumption based on a Schottky barrier silicon nanowire transistor. Thermionic and trap-assisted tunneling current conduction mechanisms are identified and discussed on the base of the device sensitivity upon current and temperature biasing. In particular, very low current sensing properties are confirmed also with previously reported polysilicon- channel nanowire Schottky barrier transistors. demonstrating that these devices are suitable for temperature and current sensing applications. Moreover, the process flow compatibility for both sensing and logic applications makes these devices suitable for heterogeneous integration.


Published in:
Proceedings of the 16th International Conference on Solid-State Sensors, Actuators and Microsystems
Presented at:
16th International Conference on Solid-State Sensors, Actuators and Microsystems, Beijing, China, June 5-9, 2011
Year:
2011
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 Record created 2011-05-19, last modified 2018-03-18

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