Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising monolithic white light emitters. Here, we show that in order to achieve solar-like white light emission from this kind of structure, one has to pay attention on the respective evolutions of radiative and non-radiative QW exciton decay times along the (11-22) facets.


Published in:
Physica Status Solidi (c) Special Issue: 10th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 10) • International Workshop Beam Injection Assessment of Microstructures in Semicondutors (BIAMS 2010), 8, 4, 1394-1397
Presented at:
International Workshop Beam Injection Assessment of Microstructures in Semicondutors (BIAMS), Haller, Germany, July 4-8, 2010
Year:
2011
Publisher:
V C H Publishers, Suite 909, 220 E 23Rd St, New York, Ny 10010 Usa
Keywords:
Laboratories:




 Record created 2011-05-02, last modified 2018-01-28


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