Laser induced pyrolytic deposition of copper from (hexafluoroacetylacetonate)(trimethylvinylsilane) copper

The photothermal laser induced CVD of Cu from its hexafluoroacetylacetonate trimethylvinylsilane deriv. was studied as a function of added H2O vapor pressure. The height, width, elec. cond., and chem. compn. of the deposited Cu lines are measured. Under anhyd. conditions, the lines were characterized by a low growth rate, high C contamination, and poor elec. resistivity. In the presence of H2O vapor, a high growth rate (1800 mm/min) and high purity Cu lines were obtained with a resistivity ratio of 1.1.


Published in:
Journal of Applied Physics, 77
Year:
1995
Keywords:
Note:
Copyright 2003 ACS
CAPLUS
AN 1995:567544
CAN 123:23029
76-1
Electric Phenomena
74
Lab. Pollution Atmospherique Sols,Lausanne,Switz. FIELD URL:
Journal
JAPIAU
written in English.
Electric conductivity and conduction (of copper from photothermal CVD); Vapor deposition processes (photochem., laser induced pyrolytic deposition of copper from (hexafluoroacetylacetonate)(trimethylvinylsilane) copper)
Laboratories:




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