Laser induced pyrolytic deposition of copper from (hexafluoroacetylacetonate)(trimethylvinylsilane) copper
The photothermal laser induced CVD of Cu from its hexafluoroacetylacetonate trimethylvinylsilane deriv. was studied as a function of added H2O vapor pressure. The height, width, elec. cond., and chem. compn. of the deposited Cu lines are measured. Under anhyd. conditions, the lines were characterized by a low growth rate, high C contamination, and poor elec. resistivity. In the presence of H2O vapor, a high growth rate (1800 mm/min) and high purity Cu lines were obtained with a resistivity ratio of 1.1.
Keywords: 7440-50-8 (Copper) Role: FMU (Formation ; unclassified) ; PEP (Physical ; engineering or chemical process) ; PRP (Properties) ; FORM (Formation ; nonpreparative) ; PROC (Process) (laser induced pyrolytic deposition of copper from (hexafluoroacetylacetonate)(tr ; laser pyrolysis copper hexafluoroacetylacetonatetrimethylvinylsilane metal deposition; elec cond copper deposition
Copyright 2003 ACS
Lab. Pollution Atmospherique Sols,Lausanne,Switz. FIELD URL:
written in English.
Electric conductivity and conduction (of copper from photothermal CVD); Vapor deposition processes (photochem., laser induced pyrolytic deposition of copper from (hexafluoroacetylacetonate)(trimethylvinylsilane) copper)
Record created on 2011-02-01, modified on 2016-08-09