Selectivity in low pressure chemical vapor deposition of copper from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane in the presence of water
Electronic device-quality Cu was deposited on Pt-patterned oxidized Si wafers from hexafluoroacetylacetonate-copper(I)-trimethylvinylsilane by using low-pressure chem. vapor deposition at 150-250 Deg in He carrier gas. Smooth Cu films ?0.8 mm thick have been deposited with an elec. resistivity close to that of bulk Cu. From the temp. dependence of the mean deposition rate, an apparent activation energy of 53-62 kJ/mol was detd. for the overall deposition process. Monitoring of the deposition process by reflection of diode laser beams allowed an early detection of nucleation and film growth on both metal-seeded and unseeded surface sites. By the addn. of water to the reaction mixt., the nucleation on Pt-seeded SiO2 was accelerated, whereas the nucleation on unseeded SiO2 was delayed. Compared to deposition without water, the overall deposition rate on Pt-seeded SiO2 was slightly increased. However, the deposits showed a rough surface structure, and the film resistivity increased to >=20 mW-cm.
Keywords: 7440-50-8 (Copper) Role: MSC (Miscellaneous) (CVD of ; selectivity of low-pressure); 139566-53-3 Role: USES (Uses) (precursor of ; for selective low-pressure CVD of copper) ; copper selective CVD
Copyright 2003 ACS
Nonferrous Metals and Alloys
Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:
written in English.
Vapor deposition processes (of copper, selectivity of low-pressure)
Record created on 2011-02-01, modified on 2016-08-09