Investigation and characterization of thin MOCVD copper films from pyrazolylboratocopper(I) complexes
Thin Cu layers were prepd. via MOCVD from volatile pyrazolylboratoCu(I) complexes. Expts. involved CVD in a low pressure reactor between 150-350 Deg in H2/N2/He mixts. were carried out. Substrate temp., source temp. and gas compn. were varied to obtain the optimum growth rate. The Cu layers were characterized by optical microscopy and SEM, XRD, and WDX. The metallic nature of the deposited films was proved by a four-point-probe measurement of the elec. resistivity. A selective deposition on metal seeded surface sites was obsd. on Au, Al, Pt and W vs. SiO2. Antiselective deposition was achieved on Pd seeded samples.
Keywords: 7440-50-8 (Copper) Role: PEP (Physical ; engineering or chemical process) ; PRP (Properties) ; PROC (Process) (metalorg. CVD and elec. properties of copper films from pyrazolylboratocopper(I) complex decompn.); 162479-23-4; 162479-24-5 Role: RCT (Reactant) ; CVD metalorg copper pyrazolylborato decompn
Copyright 2003 ACS
Crystallography and Liquid Crystals
Laboratorium fuer Anorganische Chemie,Zuerich,Switz. FIELD URL:
written in English.
Vapor deposition processes (metalorg.; of copper films using pyrazolylboratocopper complex thermal decompn.); Electric resistance (of copper films grown by metalorg. CVD using pyrazolylboratocopper complex decompn.); Thermal decomposition (of copper hydrotrispyrazolylborato trimethylphospine or triethylphospine complexes in metalorg. CVD of copper)
Record created on 2011-02-01, modified on 2016-08-09