Thin Cu layers were prepd. via MOCVD from volatile pyrazolylboratoCu(I) complexes. Expts. involved CVD in a low pressure reactor between 150-350 Deg in H2/N2/He mixts. were carried out. Substrate temp., source temp. and gas compn. were varied to obtain the optimum growth rate. The Cu layers were characterized by optical microscopy and SEM, XRD, and WDX. The metallic nature of the deposited films was proved by a four-point-probe measurement of the elec. resistivity. A selective deposition on metal seeded surface sites was obsd. on Au, Al, Pt and W vs. SiO2. Antiselective deposition was achieved on Pd seeded samples.