Selective low-pressure chemical vapor deposition of copper and platinum

The low-pressure chem. vapor deposition of copper and platinum was studied on SiO2 substrates which had been locally prenucleated with ultrathin metal layers of Pt, Cu, Pd, Au, and W. These layers were between 0.1 and 30 .ANG. thick and were produced by vacuum evapn. Copper metal is deposited selectively on top of the prenucleation layers from gaseous bishexafluoroacetylacetonate {Cu(hfa)2} dild. in hydrogen. High-quality copper could be grown at temps. in the range of 300-400 Deg with elec. resistivities as low as 2.5 times the bulk copper value. In contrast, platinum deposited from gaseous Pt(hfa)2 in H2 grows selectively on clean oxide surface rather than on the areas prenucleated with vacuum evapd. platinum.


Published in:
Journal of Vacuum Science and Technology B, 10, 1, 262
Year:
1992
Keywords:
Note:
Copyright 2003 ACS
CAPLUS
AN 1992:141097
CAN 116:141097
76-2
Electric Phenomena
Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:
Journal
JVTBD9
written in English.
Vapor deposition processes (selective, of copper and platinum, at low pressure)
Laboratories:




 Record created 2011-02-01, last modified 2018-01-28


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