Low-pressure chemical vapor deposition of copper: dependence of the selectivity on the water vapor added to a hydrogen or helium carrier gas
The selectivity of Cu deposition from bis(hexafluoroacetylacetonato)Cu(II) on SiO2 patterned with a Pt seeding layer was studied as a function of the reagent gas mixt. On Pt, the Cu film growth rate increases with the amt. of H2O vapor in the gas flow, and is independent of the chem. nature of the carrier gas used (H2 or He). The selectivity of the Cu deposition is significantly improved when using He rather than H2 as carrier gas, esp. at high H2O vapor concns. where rapid film growth can be obtained.
Keywords: 7440-06-4 (Platinum) Role: MSC (Miscellaneous) (chem. vapor deposition of copper films on silicon surface seeded with); 7440-50-8 (Copper) Role: USES (Uses) (deposition of films of ; on platinum-seeded silicon ; chem. vapor); 14781-45-4 (Bis(hexafluoroace ; deposition copper platinum seeded silicon
Copyright 2003 ACS
Crystallography and Liquid Crystals
Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:
written in English.
Vapor deposition processes (of copper films on silicon surface seeded with platinum, from bis(hexafluoroacetylacetonato)copper decompn.)
Record created on 2011-02-01, modified on 2016-08-09