Low-pressure chemical vapor deposition of copper: dependence of the selectivity on the water vapor added to a hydrogen or helium carrier gas

The selectivity of Cu deposition from bis(hexafluoroacetylacetonato)Cu(II) on SiO2 patterned with a Pt seeding layer was studied as a function of the reagent gas mixt. On Pt, the Cu film growth rate increases with the amt. of H2O vapor in the gas flow, and is independent of the chem. nature of the carrier gas used (H2 or He). The selectivity of the Cu deposition is significantly improved when using He rather than H2 as carrier gas, esp. at high H2O vapor concns. where rapid film growth can be obtained.


Published in:
Journal of Applied Physics, 72
Year:
1992
Keywords:
Note:
Copyright 2003 ACS
CAPLUS
AN 1992:623332
CAN 117:223332
75-1
Crystallography and Liquid Crystals
76
Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:
Journal
JAPIAU
written in English.
Vapor deposition processes (of copper films on silicon surface seeded with platinum, from bis(hexafluoroacetylacetonato)copper decompn.)
Laboratories:




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