The influence of water vapor on the selective low pressure CVD of copper
1991
Abstract
Low pressure CVD of Cu from its bis-hexafluoroacetylacetonate was studied on oxidized Si substrates locally seeded with a 2.5 .ANG. Pt prenucleation film.
Details
Title
The influence of water vapor on the selective low pressure CVD of copper
Author(s)
Lecohier, B. ; Philippoz, J. M. ; Calpini, B. ; Stumm, T. ; Van den Bergh, H.
Published in
Journal Physics IV France
Volume
2
Issue
C2
Pages
C2-279-C2-286
Date
1991
Keywords
7440-50-8 (Copper) Role: PEP (Physical; engineering or chemical process); PROC (Process) (film deposition of; effect of water vapor on); 14781-45-4 Role: USES (Uses) (in copper vapor deposition; effect of water vapor on); 7732-18-5 (Water) Role: USES (U; water vapor CVD copper fluoroacetylacetonate; platinum prenucleation copper oxidized silicon
Note
Copyright 2003 ACS
CAPLUS
AN 1992:73396
CAN 116:73396
76-2
Electric Phenomena
75
Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:
Journal
JPICEI
written in English.
Vapor deposition processes (organometallic, of copper, effect of water vapor on)
CAPLUS
AN 1992:73396
CAN 116:73396
76-2
Electric Phenomena
75
Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:
Journal
JPICEI
written in English.
Vapor deposition processes (organometallic, of copper, effect of water vapor on)
Laboratories
LPAS