The influence of water vapor on the selective low pressure CVD of copper

Low pressure CVD of Cu from its bis-hexafluoroacetylacetonate was studied on oxidized Si substrates locally seeded with a 2.5 .ANG. Pt prenucleation film.


Published in:
Journal Physics IV France, 2, C2, C2-279 - C2-286
Year:
1991
Keywords:
Note:
Copyright 2003 ACS
CAPLUS
AN 1992:73396
CAN 116:73396
76-2
Electric Phenomena
75
Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:
Journal
JPICEI
written in English.
Vapor deposition processes (organometallic, of copper, effect of water vapor on)
Laboratories:




 Record created 2011-02-01, last modified 2018-01-28


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