The influence of water vapor on the selective low pressure CVD of copper

• Published in: Journal Physics IV France, vol. 2, num. C2, p. C2-279 - C2-286
• Publication date: 1991

Low pressure CVD of Cu from its bis-hexafluoroacetylacetonate was studied on oxidized Si substrates locally seeded with a 2.5 .ANG. Pt prenucleation film.

Keywords: 7440-50-8 (Copper) Role: PEP (Physical ; engineering or chemical process) ; PROC (Process) (film deposition of ; effect of water vapor on); 14781-45-4 Role: USES (Uses) (in copper vapor deposition ; effect of water vapor on); 7732-18-5 (Water) Role: USES (U ; water vapor CVD copper fluoroacetylacetonate; platinum prenucleation copper oxidized silicon

Note:

Copyright 2003 ACS

CAPLUS

AN 1992:73396

CAN 116:73396

76-2

Electric Phenomena

75

Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:

Journal

JPICEI

written in English.

Vapor deposition processes (organometallic, of copper, effect of water vapor on)

Reference

• EPFL-ARTICLE-162840
• doi:10.1051/jp4:1991234

Record created on 2011-02-01, modified on 2016-08-09