Deposition kinetics of platinum small ohmic contacts and Schottky diodes

A 351-363 nm wavelength argon laser is used to induce pyrolytic laser chem. vapor deposition of platinum, using platinum bishexafluoroacetylacetonate as a precursor. The deposit thicknesses and diams. are presented according to exposure time, precursor pressure, and laser spot diam. Calcn. of the temp. induced by the laser radiation exposure by using a method developed allows one to study the kinetics of the deposition process which takes place either under a regimen controlled by the diffusion of the reactants or under a regimen controlled by the reaction kinetics, depending on the laser power d. used. The process presents an apparent activation energy of about 6 kcal/mol. The deposits obtained present high purity and good elec. and morphol. properties.


Published in:
Journal of Applied Physics, 70, 2, 966
Year:
1991
Keywords:
Note:
Copyright 2003 ACS
CAPLUS
AN 1991:503595
CAN 115:103595
76-2
Electric Phenomena
Dep. Electr. Eng.,Univ. Vigo,Vigo,Spain. FIELD URL:
Journal
JAPIAU
written in English.
Laser radiation (in deposition of platinum ohmic contacts); Electric contacts (platinum, on silicon, deposition kinetics for); Diodes (Schottky, platinum-silicon, deposition kinetics of)
Laboratories:




 Record created 2011-02-01, last modified 2018-01-28


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