Deposition kinetics of platinum small ohmic contacts and Schottky diodes
A 351-363 nm wavelength argon laser is used to induce pyrolytic laser chem. vapor deposition of platinum, using platinum bishexafluoroacetylacetonate as a precursor. The deposit thicknesses and diams. are presented according to exposure time, precursor pressure, and laser spot diam. Calcn. of the temp. induced by the laser radiation exposure by using a method developed allows one to study the kinetics of the deposition process which takes place either under a regimen controlled by the diffusion of the reactants or under a regimen controlled by the reaction kinetics, depending on the laser power d. used. The process presents an apparent activation energy of about 6 kcal/mol. The deposits obtained present high purity and good elec. and morphol. properties.
Keywords: 7440-21-3 (Silicon) Role: USES (Uses) (deposition of platinum on ; for ohmic contacts) ; 7440-06-4 (Platinum) Role: TEM (Technical or engineered material use) ; USES (Uses) (elec. contacts of ; deposition kinetics for) ; 65353-51-7 (Platinum bis(hexafluoroac ; deposition platinum pyrolytic ohmic contact ; Schottky diode silicon platinum laser radiation
Copyright 2003 ACS
Dep. Electr. Eng.,Univ. Vigo,Vigo,Spain. FIELD URL:
written in English.
Laser radiation (in deposition of platinum ohmic contacts); Electric contacts (platinum, on silicon, deposition kinetics for); Diodes (Schottky, platinum-silicon, deposition kinetics of)
Record created on 2011-02-01, modified on 2016-08-09