A laser-induced depostion technique is used to produce platinum interconnection lines for microelectronic applications. The influence of the laser power as well as the vapor pressure of the precursor upon the geometry, the morphol. and the line resistivity is studied. All the lines are essentially 100% Pt and resistivities very close to that of pure platinum can be achieved depending on the morphol. Line width equal to or less than the laser spot diam. have been obtained, thus enabling to produce lines in the submicron range.