Laser chemical vapor deposition of gallium and gallium arsenide

Expts. are described on the pyrolytic and photolytic laser chem. vapor deposition (LCVD) of Ga and GaAs, as well as hybrid deposition of the latter. Pyrolytic Ga deposits change in shape with laser power variations. A deposit in the shape of an annulus of .apprx.14 m outside diam. is obsd. at intermediate power densities. The deposited metal is amorphous. Ga photolytic deposits consist of small spheroids 10-20 nm in diam. and a metallic halo around the center of the deposit is again obsd. Both pyrolytic and photolytic LCVD of GaAs from a mixt. of Me3Ga and Me3As were unsuccessful.


Published in:
Helvetica Physica Acta, 59, 6-7, 1014-1017
Year:
1986
Keywords:
Note:
Copyright 2003 ACS
CAPLUS
AN 1986:543807
CAN 105:143807
75-2
Crystallography and Liquid Crystals
74, 76
Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:
Journal
HPACAK
written in English.
Laser radiation (vapor deposition of gallium and gallium arsenide induced by)
Laboratories:




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