Laser chemical vapor deposition of gallium and gallium arsenide
Expts. are described on the pyrolytic and photolytic laser chem. vapor deposition (LCVD) of Ga and GaAs, as well as hybrid deposition of the latter. Pyrolytic Ga deposits change in shape with laser power variations. A deposit in the shape of an annulus of .apprx.14 m outside diam. is obsd. at intermediate power densities. The deposited metal is amorphous. Ga photolytic deposits consist of small spheroids 10-20 nm in diam. and a metallic halo around the center of the deposit is again obsd. Both pyrolytic and photolytic LCVD of GaAs from a mixt. of Me3Ga and Me3As were unsuccessful.
Copyright 2003 ACS
Crystallography and Liquid Crystals
Lab. Chim. Tech.,Ec. Polytech. Fed. Lausanne,Lausanne,Switz. FIELD URL:
written in English.
Laser radiation (vapor deposition of gallium and gallium arsenide induced by)
Record created on 2011-02-01, modified on 2016-08-09