We present the latest developments and some preliminary results on High-Voltage MOSFET modelling at EPFL. A novel physics-based compact model is derived for the drift region. It includes velocity saturation and Poisson equation in a self consistent formalism. Next, this drift extension has been combined with a non-uniformly doped MOSFET compact model for the low voltage section of the device. The complete model has been implemented in Verilog-A language. Evaluation against TCAD simulations and actual measurements on state-of-art HV-MOS devices confirm the soundness of this approach.