000161224 001__ 161224
000161224 005__ 20181203022230.0
000161224 022__ $$a00036951
000161224 02470 $$2ISI$$a000252470900053
000161224 0247_ $$2doi$$a10.1063/1.2830015
000161224 037__ $$aARTICLE
000161224 245__ $$aElectron counting at room temperature in an avalanche bipolar transistor
000161224 269__ $$a2008
000161224 260__ $$c2008
000161224 336__ $$aJournal Articles
000161224 520__ $$aWe report on real-time detection of single electrons inside a n-p-n bipolar junction transistor at room temperature. Single electrons injected through the base-emitter junction trigger with a high probability the avalanche breakdown of the strongly reverse-biased collector-base junction. The breakdown, rapidly stopped by an avalanche quenching circuit, produces a voltage pulse at the collector which corresponds to the detection of a single electron. Pulse rates corresponding to currents down to the attoampere range are measured with an integration time of about 10 s. © 2008 American Institute of Physics.
000161224 6531_ $$aP-N Junctions
000161224 700__ $$aLany, Marc
000161224 700__ $$0240034$$g110635$$aBoero, Giovanni
000161224 700__ $$aPopovic, Radivoje$$g106136$$0241021
000161224 773__ $$j92$$tApplied Physics Letters$$k2$$q022111
000161224 909C0 $$xU10321$$0252040$$pLMIS1
000161224 909C0 $$xU10323$$0252356$$pLMIS3
000161224 909CO $$pSTI$$particle$$ooai:infoscience.tind.io:161224
000161224 917Z8 $$xWOS-2010-11-30
000161224 917Z8 $$x148230
000161224 917Z8 $$x148230
000161224 937__ $$aEPFL-ARTICLE-161224
000161224 973__ $$rREVIEWED$$sPUBLISHED$$aEPFL
000161224 980__ $$aARTICLE