Electro-optic and electro-absorption characterization of InAs quantum dot waveguides

Optical properties of multilayer InAs quantum dot waveguides, grown by molecular beam epitaxy, have been studied under applied electric field. Fabry-Perot measurements at 1515 nm on InAs/GaAs quantum dot structures yield a significantly enhanced linear electro-optic efficiency compared to bulk GaAs. Electro-absorption measurements at 1300 nm showed increased absorption with applied field accompanied with red shift of the spectra. Spectral shifts of up to 21% under 18 Volt bias was observed at 1320 nm. (C) 2008 Optical Society of America.


Published in:
Optics Express, 16, 3439-3444
Year:
2008
Keywords:
Laboratories:




 Record created 2010-11-30, last modified 2018-01-28


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