Shape-engineered epitaxial InGaAs quantum rods for laser applications

We apply artificial shape engineering of epitaxial semiconductor nanostructures to demonstrate InGaAs quantum rods (QRs), nanocandles, and quantum dots-in-rods on a GaAs substrate. The evolution of the QRs from a zero-dimensional to one-dimensional confinement is evidenced by systematically measuring the photoluminescence and photoluminescence decay as a function of the rod length. Lasers based on a three-stack QR active region are demonstrated at room temperature, validating the applicability of the QRs in the real devices. (C) 2008 American Institute of Physics.


Published in:
Applied Physics Letters, 92, -
Year:
2008
Keywords:
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 Record created 2010-11-30, last modified 2018-01-28


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