Oscillator Based on Suspended Gate MOS Transistors
2008
Abstract
The paper deals with the oscillator applications based on vibrating mode of the suspended gate SG-MOSFET transistor. In order to simulate the electrical behavior of the transistor a small-signal equivalent circuit of the gate is proposed and validated. An adapted 16MHz oscillator topology originated from Pierce scheme is demonstrated.
Details
Title
Oscillator Based on Suspended Gate MOS Transistors
Author(s)
Rusu, A. ; Mazza, M. ; Chauhan, Y. S. ; Ionescu, A. M.
Published in
Romanian Journal Of Information Science And Technology
Volume
11
Pages
423-433
Date
2008
Other identifier(s)
View record in Web of Science
Laboratories
NANOLAB
Record Appears in
Scientific production and competences > STI - School of Engineering > IEM - Institut d'Electricité et de Microtechnique > NANOLAB - Nanoelectronic Devices Laboratory
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Peer-reviewed publications
Work produced at EPFL
Journal Articles
Published
Record creation date
2010-11-30