2-mu m WAVELENGTH RANGE InGa(Al)As/InP-AlGaAs/GaAs WAFER FUSED VCSELs for SPECTROSCOPIC APPLICATIONS

We demonstrate 2-mu m wavelength, wafer-fused InGa(Al)As/InP-AlGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting single-mode power of 0.5 mW at room-temperature with a threshold current of 4mA and side-mode suppression ratio of over 30 dB. Emission wavelength can be continuously tuned with current by similar to 5 nm without mode hopping with a tuning rate of 0.31 nm/mA. These features demonstrate the long wavelength VCSELs potential for gas sensing and other optical spectroscopy applications.


Published in:
2008 Ieee 20Th International Conference On Indium Phosphide And Related Materials (Iprm), 298-300
Presented at:
20th International Conference on Indium Phosphide and Related Materials, Versailles, FRANCE, May 25-29, 2008
Year:
2008
Publisher:
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
Keywords:
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 Record created 2010-11-30, last modified 2018-03-17


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