The self-interstitial in silicon and germanium
Jones, R.; Carvalho, A.; Goss, J. P.; Briddon, P. R.
2009

Abstract

Low temperature irradiation experiments show a remarkable contrast between Si and Ge. suggesting that the behavior of self-interstitials and vacancies is very different in the two materials. The present paper reviews theoretical and experimental investigations of the defects in an attempt to understand these differences. (C) 2008 Elsevier B.V. All rights reserved.

Details

Title The self-interstitial in silicon and germanium
Author(s) Jones, R. ; Carvalho, A. ; Goss, J. P. ; Briddon, P. R.
Published in Materials Science And Engineering B-Advanced Functional Solid-State Materials
Volume 159-60
Pages 112-116
Conference Symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications held at the 2008 E-MRS Spring Meeting, Strasbourg, FRANCE, May 26-30, 2008
Date 2009
Keywords
DOI https://doi.org/10.1016/j.mseb.2008.09.013
Other identifier(s) View record in Web of Science
Laboratories LC
Record Appears in Scientific production and competences > STI - School of Engineering > STI Archives > LC - Ceramics Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date 2010-11-30

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