The self-interstitial in silicon and germanium
2009
Abstract
Low temperature irradiation experiments show a remarkable contrast between Si and Ge. suggesting that the behavior of self-interstitials and vacancies is very different in the two materials. The present paper reviews theoretical and experimental investigations of the defects in an attempt to understand these differences. (C) 2008 Elsevier B.V. All rights reserved.
Details
Title
The self-interstitial in silicon and germanium
Author(s)
Jones, R. ; Carvalho, A. ; Goss, J. P. ; Briddon, P. R.
Published in
Materials Science And Engineering B-Advanced Functional Solid-State Materials
Volume
159-60
Pages
112-116
Conference
Symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications held at the 2008 E-MRS Spring Meeting, Strasbourg, FRANCE, May 26-30, 2008
Date
2009
Keywords
Other identifier(s)
View record in Web of Science
Laboratories
LC
Record Appears in
Scientific production and competences > STI - School of Engineering > STI Archives > LC - Ceramics Laboratory
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Peer-reviewed publications
Conference Papers
Work produced at EPFL
Published
Record creation date
2010-11-30