The self-interstitial in silicon and germanium

Low temperature irradiation experiments show a remarkable contrast between Si and Ge. suggesting that the behavior of self-interstitials and vacancies is very different in the two materials. The present paper reviews theoretical and experimental investigations of the defects in an attempt to understand these differences. (C) 2008 Elsevier B.V. All rights reserved.


Published in:
Materials Science And Engineering B-Advanced Functional Solid-State Materials, 159-60, 112-116
Presented at:
Symposium on Advanced Silicon Materials Research for Electronic and Photovoltaic Applications held at the 2008 E-MRS Spring Meeting, Strasbourg, FRANCE, May 26-30, 2008
Year:
2009
Keywords:
Laboratories:




 Record created 2010-11-30, last modified 2018-09-13


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