1.3-mu m InGaAlAs/InP-AlGaAs/GaAs Wafer-Fused VCSELs with 10-Gb/s modulation speed up to 100 degrees C
Mereuta, A.; Sirbu, A.; Caliman, A.; Iakovlev, V.; Suruceanu, G.; Kapon, E.
2009

Abstract

10-Gb/s modulation speed up to 100 degrees C temperature is achieved with wafer-fused VCSELs incorporating re-grown tunnel junction and emitting more than 1-mW single mode power at the 1300-nm waveband in the full temperature range. (C) 2009 Optical Society of America

Details

Title 1.3-mu m InGaAlAs/InP-AlGaAs/GaAs Wafer-Fused VCSELs with 10-Gb/s modulation speed up to 100 degrees C
Author(s) Mereuta, A. ; Sirbu, A. ; Caliman, A. ; Iakovlev, V. ; Suruceanu, G. ; Kapon, E.
Published in 2009 Ieee 21St International Conference On Indium Phosphide & Related Materials (Iprm)
Pages 375-378
Conference 21st International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, May 10-14, 2009
Date 2009
Publisher Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
DOI https://doi.org/10.1109/ICIPRM.2009.5012446
Other identifier(s) View record in Web of Science
Laboratories LPN
Record Appears in Scientific production and competences > SB - School of Basic Sciences > SB Archives > LPN - Laboratory of the Physics of Nanostructures
Conference Papers
Work produced at EPFL
Published
Record creation date 2010-11-30

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