1.3-mu m InGaAlAs/InP-AlGaAs/GaAs Wafer-Fused VCSELs with 10-Gb/s modulation speed up to 100 degrees C

10-Gb/s modulation speed up to 100 degrees C temperature is achieved with wafer-fused VCSELs incorporating re-grown tunnel junction and emitting more than 1-mW single mode power at the 1300-nm waveband in the full temperature range. (C) 2009 Optical Society of America


Published in:
2009 Ieee 21St International Conference On Indium Phosphide & Related Materials (Iprm), 375-378
Presented at:
21st International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, May 10-14, 2009
Year:
2009
Publisher:
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
Laboratories:




 Record created 2010-11-30, last modified 2018-03-17


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