10-Gb/s modulation speed up to 100 degrees C temperature is achieved with wafer-fused VCSELs incorporating re-grown tunnel junction and emitting more than 1-mW single mode power at the 1300-nm waveband in the full temperature range. (C) 2009 Optical Society of America
Title
1.3-mu m InGaAlAs/InP-AlGaAs/GaAs Wafer-Fused VCSELs with 10-Gb/s modulation speed up to 100 degrees C
Published in
2009 Ieee 21St International Conference On Indium Phosphide & Related Materials (Iprm)
Pages
375-378
Conference
21st International Conference on Indium Phosphide and Related Materials, Newport Beach, CA, May 10-14, 2009
Date
2009
Publisher
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa
Record creation date
2010-11-30